DNA30E2200FE IXYS
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 370A; Ufmax: 1.22V
Max. forward impulse current: 370A
Kind of package: tube
Type of diode: rectifying
Semiconductor structure: single diode
Load current: 30A
Max. forward voltage: 1.22V
Max. off-state voltage: 2.2kV
Case: ISOPLUS i4-pac™ x024e
Features of semiconductor devices: high voltage
Mounting: THT
Power dissipation: 110W
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 370A; Ufmax: 1.22V
Max. forward impulse current: 370A
Kind of package: tube
Type of diode: rectifying
Semiconductor structure: single diode
Load current: 30A
Max. forward voltage: 1.22V
Max. off-state voltage: 2.2kV
Case: ISOPLUS i4-pac™ x024e
Features of semiconductor devices: high voltage
Mounting: THT
Power dissipation: 110W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 250 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
7+ | 11.13 EUR |
9+ | 7.97 EUR |
10+ | 7.52 EUR |
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Technische Details DNA30E2200FE IXYS
Description: DIODE GEN PURP 2.2KV 30A I4-PAC, Packaging: Tube, Package / Case: TO-251-2, IPAK, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 7pF @ 700V, 1MHz, Current - Average Rectified (Io): 30A, Supplier Device Package: i4-PAC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 2200 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A, Current - Reverse Leakage @ Vr: 40 µA @ 2200 V.
Weitere Produktangebote DNA30E2200FE nach Preis ab 7.52 EUR bis 14.61 EUR
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DNA30E2200FE | Hersteller : IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 370A; Ufmax: 1.22V Max. forward impulse current: 370A Kind of package: tube Type of diode: rectifying Semiconductor structure: single diode Load current: 30A Max. forward voltage: 1.22V Max. off-state voltage: 2.2kV Case: ISOPLUS i4-pac™ x024e Features of semiconductor devices: high voltage Mounting: THT Power dissipation: 110W |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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DNA30E2200FE | Hersteller : IXYS | Rectifiers High Voltage Std Rectifier Sngl Diode |
auf Bestellung 175 Stücke: Lieferzeit 10-14 Tag (e) |
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DNA30E2200FE | Hersteller : IXYS |
Description: DIODE GEN PURP 2.2KV 30A I4-PAC Packaging: Tube Package / Case: TO-251-2, IPAK Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 7pF @ 700V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: i4-PAC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 2200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 2200 V |
auf Bestellung 227 Stücke: Lieferzeit 10-14 Tag (e) |
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DNA30E2200FE | Hersteller : Littelfuse | Rectifier Diode 2.2KV 30A 2-Pin i4-PAC Tube |
Produkt ist nicht verfügbar |