DTA113ZE3HZGTL ROHM Semiconductor
Hersteller: ROHM SemiconductorDigital Transistors PNP, SOT-416, R1?R2 Leak Absorption Type Digital Transistor (Bias Resistor Built-in Transistor)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.7 EUR |
| 10+ | 0.52 EUR |
| 100+ | 0.29 EUR |
| 1000+ | 0.15 EUR |
| 3000+ | 0.13 EUR |
| 9000+ | 0.1 EUR |
| 24000+ | 0.097 EUR |
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Technische Details DTA113ZE3HZGTL ROHM Semiconductor
Description: PNP, SOT-416, R1R2 LEAK ABSORPTI, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V, Supplier Device Package: EMT3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 10 kOhms.
Weitere Produktangebote DTA113ZE3HZGTL nach Preis ab 0.15 EUR bis 0.76 EUR
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| DTA113ZE3HZGTL | Hersteller : Rohm Semiconductor |
Description: PNP, SOT-416, R1R2 LEAK ABSORPTI Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V Supplier Device Package: EMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DTA113ZE3HZGTL | Hersteller : Rohm Semiconductor |
Description: PNP, SOT-416, R1R2 LEAK ABSORPTI Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V Supplier Device Package: EMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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