EFC6601R-TR onsemi
Hersteller: onsemi
Description: MOSFET 2N-CH EFCP2718
Packaging: Bulk
Package / Case: 6-XFBGA, FCBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Supplier Device Package: EFCP2718-6CE-020
Description: MOSFET 2N-CH EFCP2718
Packaging: Bulk
Package / Case: 6-XFBGA, FCBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Supplier Device Package: EFCP2718-6CE-020
auf Bestellung 692464 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
876+ | 0.55 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details EFC6601R-TR onsemi
Description: MOSFET 2N-CH EFCP2718, Packaging: Tape & Reel (TR), Package / Case: 6-XFBGA, FCBGA, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V, FET Feature: Logic Level Gate, 2.5V Drive, Supplier Device Package: EFCP2718-6CE-020, Part Status: Active.
Weitere Produktangebote EFC6601R-TR nach Preis ab 0.51 EUR bis 1.51 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
EFC6601R-TR | Hersteller : onsemi | MOSFET N-Channel Power MOSFET, 24V, 13A, 11.5mOhm, Dual EFCP |
auf Bestellung 88 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
EFC6601R-TR | Hersteller : ON Semiconductor |
auf Bestellung 2880 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||||
EFC6601R-TR | Hersteller : ONSEMI |
Description: ONSEMI - EFC6601R-TR - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 684263 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
EFC6601R-TR | Hersteller : ON Semiconductor | Trans MOSFET N-CH Si 13A 6-Pin WLCSP T/R |
Produkt ist nicht verfügbar |
||||||||||||||||||
EFC6601R-TR | Hersteller : onsemi |
Description: MOSFET 2N-CH EFCP2718 Packaging: Tape & Reel (TR) Package / Case: 6-XFBGA, FCBGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V FET Feature: Logic Level Gate, 2.5V Drive Supplier Device Package: EFCP2718-6CE-020 Part Status: Active |
Produkt ist nicht verfügbar |
||||||||||||||||||
EFC6601R-TR | Hersteller : onsemi |
Description: MOSFET 2N-CH EFCP2718 Packaging: Cut Tape (CT) Package / Case: 6-XFBGA, FCBGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V FET Feature: Logic Level Gate, 2.5V Drive Supplier Device Package: EFCP2718-6CE-020 Part Status: Active |
Produkt ist nicht verfügbar |