EMD29T2R Rohm Semiconductor
auf Bestellung 3180 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 499+ | 0.31 EUR |
| 518+ | 0.29 EUR |
| 1000+ | 0.27 EUR |
| 2500+ | 0.25 EUR |
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Technische Details EMD29T2R Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.12W EMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 120mW, Current - Collector (Ic) (Max): 100mA, 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, 12V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 140 @ 100mA, 2V, Frequency - Transition: 250MHz, 260MHz, Resistor - Base (R1): 1kOhms, 10kOhms, Resistor - Emitter Base (R2): 10kOhms, Supplier Device Package: EMT6.
Weitere Produktangebote EMD29T2R nach Preis ab 0.2 EUR bis 2.17 EUR
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EMD29T2R | Hersteller : Rohm Semiconductor |
 Trans Digital BJT NPN/PNP 50V 100mA/500mA 150mW 6-Pin EMT T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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EMD29T2R | Hersteller : Rohm Semiconductor |
 Description: TRANS NPN/PNP PREBIAS 0.12W EMT6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 120mW Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 12V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 140 @ 100mA, 2V Frequency - Transition: 250MHz, 260MHz Resistor - Base (R1): 1kOhms, 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: EMT6 |
auf Bestellung 1806 Stücke: Lieferzeit 10-14 Tag (e) |
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EMD29T2R | Hersteller : ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50/12V Case: SOT563F Mounting: SMD Collector-emitter voltage: 50/12V Collector current: 0.1/0.5A Type of transistor: NPN / PNP Power dissipation: 0.15W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT; complementary pair Base resistor: 1/10kΩ Base-emitter resistor: 10/10kΩ Frequency: 255MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 33 Stücke: Lieferzeit 7-14 Tag (e) |
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EMD29T2R | Hersteller : ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50/12V Case: SOT563F Mounting: SMD Collector-emitter voltage: 50/12V Collector current: 0.1/0.5A Type of transistor: NPN / PNP Power dissipation: 0.15W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT; complementary pair Base resistor: 1/10kΩ Base-emitter resistor: 10/10kΩ Frequency: 255MHz |
auf Bestellung 33 Stücke: Lieferzeit 14-21 Tag (e) |
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EMD29T2R | Hersteller : Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.12W EMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 120mW Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 12V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 140 @ 100mA, 2V Frequency - Transition: 250MHz, 260MHz Resistor - Base (R1): 1kOhms, 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: EMT6 |
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EMD29T2R | Hersteller : ROHM Semiconductor |
Digital Transistors TRANS DIGI BJT NPN PNP 500MA 6PIN |
Produkt ist nicht verfügbar |