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EPC2053

EPC2053


EPC2053_datasheet.pdf Hersteller: EPC
Description: GANFET N-CH 100V 48A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 22500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+5.26 EUR
Mindestbestellmenge: 2500
Produktrezensionen
Produktbewertung abgeben

Technische Details EPC2053 EPC

Description: GANFET N-CH 100V 48A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Ta), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 9mA, Supplier Device Package: Die, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 50 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50.

Weitere Produktangebote EPC2053 nach Preis ab 5.59 EUR bis 10.81 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
EPC2053 EPC2053 Hersteller : EPC EPC2053_datasheet.pdf Description: GANFET N-CH 100V 48A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 24273 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.81 EUR
10+ 9.07 EUR
100+ 7.34 EUR
500+ 6.52 EUR
1000+ 5.59 EUR
Mindestbestellmenge: 2
EPC2053 EPC2053 Hersteller : Efficient Power Conversion epc2053_datasheet.pdf Trans MOSFET N-CH GaN 100V 48A Automotive 28-Pin Die T/R
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