EPC2104
Hersteller: EPCDescription: GANFET 2N-CH 100V 23A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Part Status: Active
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
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Technische Details EPC2104 EPC
Description: GANFET 2N-CH 100V 23A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 23A, Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V, Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 5V, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V, Vgs(th) (Max) @ Id: 2.5V @ 5.5mA, Supplier Device Package: Die, Part Status: Active.
Weitere Produktangebote EPC2104
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EPC2104 | Hersteller : EPC |
Description: GANFET 2N-CH 100V 23A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 23A Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 5V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 5.5mA Supplier Device Package: Die Part Status: Active |
auf Bestellung 4472 Stücke: Lieferzeit 10-14 Tag (e) |