EPC2106ENGRT
Hersteller: EPCDescription: GANFET 2N-CH 100V 1.7A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
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Technische Details EPC2106ENGRT EPC
Description: GANFET 2N-CH 100V 1.7A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 1.7A, Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V, Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V, Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V, Vgs(th) (Max) @ Id: 2.5V @ 600µA, Supplier Device Package: Die.
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EPC2106ENGRT | Hersteller : EPC |
Description: GANFET 2N-CH 100V 1.7A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.7A Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 600µA Supplier Device Package: Die |
Produkt ist nicht verfügbar |