F423MR12W1M1PB11BPSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET 4N-CH 1200V 50A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 3.68nF @ 800V
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V
Vgs(th) (Max) @ Id: 5.5V @ 20mA
Supplier Device Package: AG-EASY1B-2
Part Status: Obsolete
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Technische Details F423MR12W1M1PB11BPSA1 Infineon Technologies
Description: MOSFET 4N-CH 1200V 50A AG-EASY1B, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 50A, Input Capacitance (Ciss) (Max) @ Vds: 3.68nF @ 800V, Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V, Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V, Vgs(th) (Max) @ Id: 5.5V @ 20mA, Supplier Device Package: AG-EASY1B-2, Part Status: Obsolete.
Weitere Produktangebote F423MR12W1M1PB11BPSA1 nach Preis ab 326.69 EUR bis 326.69 EUR
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| F423MR12W1M1PB11BPSA1 | Hersteller : Infineon Technologies |
Discrete Semiconductor Modules LOW POWER EASY |
auf Bestellung 39 Stücke: Lieferzeit 10-14 Tag (e) |
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| F423MR12W1M1PB11BPSA1 | Hersteller : Infineon Technologies |
2.0MM,HDR,11POS,VERTICAL |
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