FCH110N65F-F155 Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: MOSFET N-CH 650V 35A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
auf Bestellung 69 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 69+ | 7.45 EUR |
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Technische Details FCH110N65F-F155 Fairchild Semiconductor
Description: MOSFET N-CH 650V 35A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V, Power Dissipation (Max): 357W (Tc), Vgs(th) (Max) @ Id: 5V @ 3.5mA, Supplier Device Package: TO-247-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V.
Weitere Produktangebote FCH110N65F-F155 nach Preis ab 7.34 EUR bis 12.43 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FCH110N65F-F155 | Hersteller : onsemi / Fairchild |
MOSFET SuperFET2 650V, 110 mOhm, FRFET |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH110N65F-F155 | Hersteller : onsemi |
Description: MOSFET N-CH 650V 35A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 5V @ 3.5mA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V |
auf Bestellung 927 Stücke: Lieferzeit 10-14 Tag (e) |
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| FCH110N65F-F155 | Hersteller : ON Semiconductor |
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auf Bestellung 440 Stücke: Lieferzeit 21-28 Tag (e) |
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FCH110N65F-F155 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 35A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| FCH110N65F-F155 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 105A; 357W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 105A Power dissipation: 357W Case: TO247 Gate-source voltage: ±20V On-state resistance: 96mΩ Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FCH110N65F-F155 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 105A; 357W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 105A Power dissipation: 357W Case: TO247 Gate-source voltage: ±20V On-state resistance: 96mΩ Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |