FDB20N50F onsemi
Hersteller: onsemiDescription: MOSFET N-CH 500V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
auf Bestellung 442 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 5.39 EUR |
| 10+ | 4.52 EUR |
| 100+ | 3.66 EUR |
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Technische Details FDB20N50F onsemi
Description: MOSFET N-CH 500V 20A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V.
Weitere Produktangebote FDB20N50F nach Preis ab 2.9 EUR bis 5.42 EUR
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FDB20N50F | Hersteller : onsemi / Fairchild |
MOSFET N-Channel UniFETTM FRFET MOSFET 500V, |
auf Bestellung 11200 Stücke: Lieferzeit 164-168 Tag (e) |
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FDB20N50F | Hersteller : ONSEMI |
Description: ONSEMI - FDB20N50F - Leistungs-MOSFET, n-Kanal, 500 V, 20 A, 0.22 ohm, TO-263 (D2PAK), Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 500 Dauer-Drainstrom Id: 20 Qualifikation: - MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 250 Gate-Source-Schwellenspannung, max.: 5 Verlustleistung: 250 Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3 Produktpalette: UniFET FRFET Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.22 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.22 SVHC: Lead (10-Jun-2022) |
auf Bestellung 966 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB20N50F | Hersteller : ONSEMI |
Description: ONSEMI - FDB20N50F - Leistungs-MOSFET, n-Kanal, 500 V, 20 A, 0.22 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85413000 productTraceability: Yes-Date/Lot Code rohsCompliant: Y-EX Verlustleistung: 250 Kanaltyp: n-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.22 rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 SVHC: Lead (17-Jan-2023) |
auf Bestellung 966 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB20N50F | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 500V 20A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| FDB20N50F | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 250W; D2PAK Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12.9A Power dissipation: 250W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDB20N50F | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 500V 20A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FDB20N50F | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 500V 20A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FDB20N50F | Hersteller : onsemi |
Description: MOSFET N-CH 500V 20A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V |
Produkt ist nicht verfügbar |
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| FDB20N50F | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 250W; D2PAK Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12.9A Power dissipation: 250W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |