auf Bestellung 20718 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.43 EUR |
| 10+ | 2.87 EUR |
| 100+ | 2.29 EUR |
| 250+ | 2.24 EUR |
| 500+ | 2.02 EUR |
| 800+ | 1.65 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDB28N30TM onsemi / Fairchild
Description: MOSFET N-CH 300V 28A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 129mOhm @ 14A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V.
Weitere Produktangebote FDB28N30TM nach Preis ab 2.29 EUR bis 4.67 EUR
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FDB28N30TM | Hersteller : onsemi |
 Description: MOSFET N-CH 300V 28A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 129mOhm @ 14A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V |
auf Bestellung 741 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB28N30TM | Hersteller : ONSEMI |
Description: ONSEMI - FDB28N30TM - Leistungs-MOSFET, n-Kanal, 300 V, 28 A, 0.108 ohm, TO-263AB, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 300V rohsCompliant: Y-EX Dauer-Drainstrom Id: 28A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 250W Anzahl der Pins: 2Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.108ohm SVHC: Lead (23-Jan-2024) |
auf Bestellung 1894 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDB28N30TM | Hersteller : ON-Semicoductor |
Transistor N-Channel MOSFET; 300V; 10V; 129mOhm; 28A; 250W; -55°C~150°C; FDB28N30TM TFDB28n30tm Anzahl je Verpackung: 10 Stücke |
auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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FDB28N30TM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 300V 28A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FDB28N30TM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 300V 28A 3-Pin(2+Tab) D2PAK T/R |
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FDB28N30TM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 300V 28A 3-Pin(2+Tab) D2PAK T/R |
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FDB28N30TM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 300V 28A 3-Pin(2+Tab) D2PAK T/R |
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FDB28N30TM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 300V 28A 3-Pin(2+Tab) D2PAK T/R |
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FDB28N30TM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 28A; 250W; D2PAK Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 28A Power dissipation: 250W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.129Ω Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDB28N30TM | Hersteller : onsemi |
Description: MOSFET N-CH 300V 28A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 129mOhm @ 14A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V |
Produkt ist nicht verfügbar |
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FDB28N30TM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 28A; 250W; D2PAK Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 28A Power dissipation: 250W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.129Ω Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |