FDB3632 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 100V 12A/80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 3.01 EUR |
| 1600+ | 2.58 EUR |
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Technische Details FDB3632 onsemi
Description: MOSFET N-CH 100V 12A/80A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V, Power Dissipation (Max): 310W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V.
Weitere Produktangebote FDB3632 nach Preis ab 2.09 EUR bis 5 EUR
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FDB3632 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 12A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 6400 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB3632 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 12A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 167 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB3632 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 12A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 167 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB3632 | Hersteller : onsemi / Fairchild |
MOSFET N-Channel PowerTrench |
auf Bestellung 16440 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB3632 | Hersteller : onsemi |
Description: MOSFET N-CH 100V 12A/80A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V |
auf Bestellung 2174 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB3632 | Hersteller : ONSEMI |
Description: ONSEMI - FDB3632 - Leistungs-MOSFET, n-Kanal, 100 V, 80 A, 0.0075 ohm, TO-263AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 80A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 310W Bauform - Transistor: TO-263AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0075ohm SVHC: Lead (14-Jun-2023) |
auf Bestellung 3940 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB3632 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 12A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FDB3632 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 12A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FDB3632 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 310W; D2PAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 310W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDB3632 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 310W; D2PAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 310W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |