auf Bestellung 1600 Stücke:
Lieferzeit 136-140 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.75 EUR |
| 10+ | 3.82 EUR |
| 100+ | 3.13 EUR |
| 250+ | 3.1 EUR |
| 500+ | 2.64 EUR |
| 800+ | 2.27 EUR |
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Technische Details FDP050AN06A0 onsemi / Fairchild
Description: MOSFET N-CH 60V 18A/80A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V, Power Dissipation (Max): 245W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V.
Weitere Produktangebote FDP050AN06A0 nach Preis ab 2.15 EUR bis 4.79 EUR
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FDP050AN06A0 | Hersteller : onsemi |
 Description: MOSFET N-CH 60V 18A/80A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V Power Dissipation (Max): 245W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V |
auf Bestellung 2304 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP050AN06A0 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 18A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FDP050AN06A0 | Hersteller : ONSEMI |
Description: ONSEMI - FDP050AN06A0 - Leistungs-MOSFET, n-Kanal, 60 V, 80 A, 0.0043 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 80A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 245W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0043ohm SVHC: Lead (14-Jun-2023) |
Produkt ist nicht verfügbar |
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FDP050AN06A0 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 18A; 245W; TO220AB Technology: PowerTrench® Case: TO220AB Mounting: THT On-state resistance: 11mΩ Kind of package: tube Power dissipation: 245W Drain current: 18A Drain-source voltage: 60V Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 80nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDP050AN06A0 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 18A; 245W; TO220AB Technology: PowerTrench® Case: TO220AB Mounting: THT On-state resistance: 11mΩ Kind of package: tube Power dissipation: 245W Drain current: 18A Drain-source voltage: 60V Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 80nC Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |