FDP6030BL Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 4
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 15 V
Description: POWER FIELD-EFFECT TRANSISTOR, 4
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 15 V
auf Bestellung 2349 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
516+ | 1.02 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDP6030BL Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 4, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -65°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 15 V.
Weitere Produktangebote FDP6030BL
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
FDP6030BL | Hersteller : FAIRCHILD | 2002 TO-220 |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
||
FDP6030BL | Hersteller : ONSEMI |
Description: ONSEMI - FDP6030BL - MOSFET, N-CH, 30V, 40A, 175DEG C, 60W tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 95860 Stücke: Lieferzeit 14-21 Tag (e) |
||
FDP6030BL | Hersteller : ON Semiconductor | Trans MOSFET N-CH 30V 40A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
||
FDP6030BL | Hersteller : onsemi / Fairchild | MOSFET N-Ch PowerTrench Logic Level |
Produkt ist nicht verfügbar |