FDT458P ON Semiconductor
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4000+ | 0.42 EUR |
| 8000+ | 0.38 EUR |
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Technische Details FDT458P ON Semiconductor
Description: MOSFET P-CH 30V 3.4A SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, Power Dissipation (Max): 3W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-223-4, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 15 V.
Weitere Produktangebote FDT458P nach Preis ab 0.37 EUR bis 1.24 EUR
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FDT458P | Hersteller : onsemi |
 Description: MOSFET P-CH 30V 3.4A SOT223-4Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-4 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 15 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDT458P | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.4A; 3W; SOT223 Technology: PowerTrench® Mounting: SMD Case: SOT223 Kind of package: reel; tape Drain-source voltage: -30V Drain current: -3.4A On-state resistance: 210mΩ Gate charge: 3.5nC Polarisation: unipolar Kind of channel: enhanced Power dissipation: 3W Gate-source voltage: ±20V Type of transistor: P-MOSFET |
auf Bestellung 3964 Stücke: Lieferzeit 7-14 Tag (e) |
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FDT458P | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.4A; 3W; SOT223 Technology: PowerTrench® Mounting: SMD Case: SOT223 Kind of package: reel; tape Drain-source voltage: -30V Drain current: -3.4A On-state resistance: 210mΩ Gate charge: 3.5nC Polarisation: unipolar Kind of channel: enhanced Power dissipation: 3W Gate-source voltage: ±20V Type of transistor: P-MOSFET |
auf Bestellung 3964 Stücke: Lieferzeit 14-21 Tag (e) |
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FDT458P | Hersteller : onsemi |
Description: MOSFET P-CH 30V 3.4A SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-4 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 15 V |
auf Bestellung 6098 Stücke: Lieferzeit 10-14 Tag (e) |
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FDT458P | Hersteller : onsemi / Fairchild |
MOSFET 30V P-Ch PowerTrench |
auf Bestellung 3468 Stücke: Lieferzeit 991-995 Tag (e) |
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FDT458P | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 30V 3.4A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDT458P | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 30V 3.4A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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FDT458P | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 30V 3.4A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |