FDY102PZ onsemi
Hersteller: onsemi
Description: MOSFET P-CH 20V 830MA SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 10 V
Description: MOSFET P-CH 20V 830MA SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 10 V
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.17 EUR |
6000+ | 0.16 EUR |
9000+ | 0.14 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDY102PZ onsemi
Description: MOSFET P-CH 20V 830MA SC89-3, Packaging: Tape & Reel (TR), Package / Case: SC-89, SOT-490, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 830mA (Ta), Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V, Power Dissipation (Max): 625mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SC-89-3, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 10 V.
Weitere Produktangebote FDY102PZ nach Preis ab 0.19 EUR bis 0.76 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FDY102PZ | Hersteller : onsemi |
Description: MOSFET P-CH 20V 830MA SC89-3 Packaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 830mA (Ta) Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-89-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 10 V |
auf Bestellung 52038 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
FDY102PZ | Hersteller : onsemi / Fairchild | MOSFET -20V Sngle PCh -1.5V Specified PowerTrnc |
auf Bestellung 219344 Stücke: Lieferzeit 10-14 Tag (e) |
||||||||||||||
FDY102PZ | Hersteller : ON Semiconductor | Trans MOSFET P-CH 20V 0.83A 3-Pin SOT-523FL T/R |
auf Bestellung 138000 Stücke: Lieferzeit 14-21 Tag (e) |