FF7MR12W1M1HB17BPSA1 Infineon Technologies

Description: EASY STANDARD, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 20mW, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 105A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 800V, Rds On (Max) @ Id, Vgs: 5.8mOhm @ 120A, 18V, Gate Charge (Qg) (Max) @ Vgs: 400nC @ 18V, FET Feature: Silicon Carbide (SiC), Vgs(th) (Max) @ Id: 5.15V @ 56mA, Supplier Device Package: AG-EASY1B.