FF800R17KP4B2NOSA2 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 800A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: No
Supplier Device Package: A-IHV130-3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1200 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 65 nF @ 25 V
Description: IGBT MODULE 1700V 800A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: No
Supplier Device Package: A-IHV130-3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1200 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 65 nF @ 25 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 1637.93 EUR |
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Technische Details FF800R17KP4B2NOSA2 Infineon Technologies
Description: IGBT MODULE 1700V 800A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 150°C (TJ), NTC Thermistor: No, Supplier Device Package: A-IHV130-3, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 1200 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 1200 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 65 nF @ 25 V.
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