auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 744.66 EUR |
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Technische Details FF900R12IE4 Infineon Technologies
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A, Case: AG-PRIME2-1, Topology: IGBT half-bridge; NTC thermistor, Technology: PrimePACK™ 2, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 900A, Pulsed collector current: 1.8kA, Power dissipation: 5.1kW, Electrical mounting: screw, Mechanical mounting: screw, Type of module: IGBT, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote FF900R12IE4
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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FF900R12IE4 | Hersteller : Infineon Technologies |
 Trans IGBT Module N-CH 1200V 900A 5100000mW 10-Pin PRIME2-1 Tray |
Produkt ist nicht verfügbar |
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| FF900R12IE4 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A Case: AG-PRIME2-1 Topology: IGBT half-bridge; NTC thermistor Technology: PrimePACK™ 2 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 900A Pulsed collector current: 1.8kA Power dissipation: 5.1kW Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FF900R12IE4 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A Case: AG-PRIME2-1 Topology: IGBT half-bridge; NTC thermistor Technology: PrimePACK™ 2 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 900A Pulsed collector current: 1.8kA Power dissipation: 5.1kW Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
Produkt ist nicht verfügbar |