FFSB0865B onsemi
Hersteller: onsemi
Description: DIODE SIL CARB 650V 10.1A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 336pF @ 1V, 100kHz
Current - Average Rectified (Io): 10.1A
Supplier Device Package: D²PAK-2 (TO-263-2)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE SIL CARB 650V 10.1A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 336pF @ 1V, 100kHz
Current - Average Rectified (Io): 10.1A
Supplier Device Package: D²PAK-2 (TO-263-2)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
800+ | 4.03 EUR |
1600+ | 3.4 EUR |
2400+ | 3.23 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FFSB0865B onsemi
Description: DIODE SIL CARB 650V 10.1A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 336pF @ 1V, 100kHz, Current - Average Rectified (Io): 10.1A, Supplier Device Package: D²PAK-2 (TO-263-2), Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
Weitere Produktangebote FFSB0865B nach Preis ab 2.75 EUR bis 6.44 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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FFSB0865B | Hersteller : onsemi | Schottky Diodes & Rectifiers 650V 8A SIC SBD GEN1.5 |
auf Bestellung 471 Stücke: Lieferzeit 10-14 Tag (e) |
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FFSB0865B | Hersteller : onsemi |
Description: DIODE SIL CARB 650V 10.1A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 336pF @ 1V, 100kHz Current - Average Rectified (Io): 10.1A Supplier Device Package: D²PAK-2 (TO-263-2) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
auf Bestellung 3980 Stücke: Lieferzeit 10-14 Tag (e) |
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FFSB0865B | Hersteller : ON Semiconductor | Rectifier Diode Schottky SiC 650V 10.1A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FFSB0865B | Hersteller : ON Semiconductor | Rectifier Diode Schottky SiC 650V 10.1A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |