FGH50T65SQD-F155 ONSEMI
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
11+ | 7.05 EUR |
12+ | 6.35 EUR |
15+ | 4.86 EUR |
16+ | 4.6 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FGH50T65SQD-F155 ONSEMI
Description: IGBT TRENCH FS 650V 100A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 31 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 22ns/105ns, Switching Energy: 180µJ (on), 45µJ (off), Test Condition: 400V, 12.5A, 4.7Ohm, 15V, Gate Charge: 99 nC, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 268 W.
Weitere Produktangebote FGH50T65SQD-F155 nach Preis ab 3.85 EUR bis 7.18 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FGH50T65SQD-F155 | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 134W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 99nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
FGH50T65SQD-F155 | Hersteller : onsemi |
Description: IGBT TRENCH FS 650V 100A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 31 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/105ns Switching Energy: 180µJ (on), 45µJ (off) Test Condition: 400V, 12.5A, 4.7Ohm, 15V Gate Charge: 99 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 268 W |
auf Bestellung 316 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
FGH50T65SQD-F155 | Hersteller : onsemi / Fairchild | IGBT Transistors 650V FS4 Trench IGBT |
auf Bestellung 290 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
FGH50T65SQD-F155 | Hersteller : ON Semiconductor | Trans IGBT Chip N-CH 650V 100A 268000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
||||||||||||||||||
FGH50T65SQD-F155 | Hersteller : ON Semiconductor | Trans IGBT Chip N-CH 650V 100A 268W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
||||||||||||||||||
FGH50T65SQD-F155 | Hersteller : ON Semiconductor | Trans IGBT Chip N-CH 650V 100A 268W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |