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FP50R07N2E4_B11 Infineon Technologies


INFN-S-A0003209815-1.pdf?t.download=true&u=5oefqw Hersteller: Infineon Technologies
Description: FP50R07 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
auf Bestellung 200 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+114.55 EUR
Mindestbestellmenge: 5
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Technische Details FP50R07N2E4_B11 Infineon Technologies

Description: FP50R07 - IGBT MODULE, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Three Phase Bridge Rectifier, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: AG-ECONO2B, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 70 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 20 mW, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V.

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FP50R07N2E4_B11 Hersteller : Infineon Technologies Infineon-FP50R07N2E4_B11-DS-v03_00-EN-219195.pdf IGBT Modules IGBT Module 50A 650V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)