FQA140N10 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 100V 140A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
auf Bestellung 605 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 11 EUR |
| 30+ | 8.79 EUR |
| 120+ | 7.86 EUR |
| 510+ | 6.94 EUR |
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Technische Details FQA140N10 onsemi
Description: MOSFET N-CH 100V 140A TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 140A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-3PN, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V.
Weitere Produktangebote FQA140N10 nach Preis ab 6 EUR bis 11.09 EUR
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FQA140N10 | Hersteller : onsemi / Fairchild |
MOSFET 100V N-Channel QFET |
auf Bestellung 2408 Stücke: Lieferzeit 10-14 Tag (e) |
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FQA140N10 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-3P Tube |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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FQA140N10 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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FQA140N10 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 99A Pulsed drain current: 560A Power dissipation: 375W Case: TO3PN Gate-source voltage: ±25V On-state resistance: 10mΩ Mounting: THT Gate charge: 285nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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FQA140N10 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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FQA140N10 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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FQA140N10 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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FQA140N10 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 99A Pulsed drain current: 560A Power dissipation: 375W Case: TO3PN Gate-source voltage: ±25V On-state resistance: 10mΩ Mounting: THT Gate charge: 285nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |