FQP6N80C ONSEMI
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; 158W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Power dissipation: 158W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; 158W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Power dissipation: 158W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 254 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
26+ | 2.82 EUR |
41+ | 1.77 EUR |
43+ | 1.67 EUR |
500+ | 1.63 EUR |
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Technische Details FQP6N80C ONSEMI
Description: MOSFET N-CH 800V 5.5A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.75A, 10V, Power Dissipation (Max): 158W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 25 V.
Weitere Produktangebote FQP6N80C nach Preis ab 1.65 EUR bis 4.33 EUR
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FQP6N80C | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; 158W; TO220AB Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.2A Power dissipation: 158W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 254 Stücke: Lieferzeit 14-21 Tag (e) |
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FQP6N80C | Hersteller : onsemi |
Description: MOSFET N-CH 800V 5.5A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.75A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 25 V |
auf Bestellung 825 Stücke: Lieferzeit 10-14 Tag (e) |
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FQP6N80C | Hersteller : onsemi / Fairchild | MOSFETs 800V N-Ch Q-FET advance C-Series |
auf Bestellung 2316 Stücke: Lieferzeit 10-14 Tag (e) |
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FQP6N80C | Hersteller : ON Semiconductor | Trans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FQP6N80C | Hersteller : ONSEMI |
Description: ONSEMI - FQP6N80C - Leistungs-MOSFET, n-Kanal, 800 V, 5.5 A, 2.1 ohm, TO-220, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 800 Dauer-Drainstrom Id: 5.5 Rds(on)-Messspannung Vgs: 10 MSL: - Verlustleistung Pd: 158 Bauform - Transistor: TO-220 Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 2.1 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 5 SVHC: Lead (17-Jan-2022) |
auf Bestellung 752 Stücke: Lieferzeit 14-21 Tag (e) |
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FQP6N80C | Hersteller : ON-Semicoductor |
Trans MOSFET N-CH 60V 32A 3-Pin(3+Tab) TO-220AB FQP6N80C TFQP6n80c Anzahl je Verpackung: 10 Stücke |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
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FQP6N80C Produktcode: 129953 |
Transistoren > MOSFET N-CH |
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