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FQP6P25

FQP6P25 Fairchild Semiconductor

FAIRS26866-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: MOSFET P-CH 250V 6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V
auf Bestellung 127041 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
333+1.48 EUR
Mindestbestellmenge: 333
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Technische Details FQP6P25 Fairchild Semiconductor

Description: MOSFET P-CH 250V 6A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3A, 10V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V.

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FQP6P25 Hersteller : Fairchild FAIRS26866-1.pdf?t.download=true&u=5oefqw
auf Bestellung 40000 Stücke:
Lieferzeit 21-28 Tag (e)
FQP6P25 Hersteller : FAIRCHILD FAIRS26866-1.pdf?t.download=true&u=5oefqw TO-220 07+
auf Bestellung 10 Stücke:
Lieferzeit 21-28 Tag (e)