FQP7N80C ON Semiconductor
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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44+ | 3.58 EUR |
50+ | 2.98 EUR |
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Technische Details FQP7N80C ON Semiconductor
Description: MOSFET N-CH 800V 6.6A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc), Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.3A, 10V, Power Dissipation (Max): 167W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V.
Weitere Produktangebote FQP7N80C nach Preis ab 2.34 EUR bis 4.56 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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FQP7N80C | Hersteller : onsemi / Fairchild | MOSFET 800V N-Ch Q-FET advance C-Series |
auf Bestellung 697 Stücke: Lieferzeit 10-14 Tag (e) |
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FQP7N80C | Hersteller : ON Semiconductor | Trans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FQP7N80C | Hersteller : onsemi |
Description: MOSFET N-CH 800V 6.6A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.3A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V |
Produkt ist nicht verfügbar |