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FQU10N20LTU

FQU10N20LTU Fairchild Semiconductor

FAIRS38841-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 200V 7.6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 51W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
auf Bestellung 1190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
650+0.76 EUR
Mindestbestellmenge: 650
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Technische Details FQU10N20LTU Fairchild Semiconductor

Description: MOSFET N-CH 200V 7.6A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 3.8A, 10V, Power Dissipation (Max): 2.5W (Ta), 51W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: IPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V.

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FQU10N20LTU Hersteller : ONSEMI FAIRS38841-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - FQU10N20LTU - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 1190 Stücke:
Lieferzeit 14-21 Tag (e)
FQU10N20LTU FQU10N20LTU Hersteller : onsemi FQD10N20L%2C%20FQU10N20L.pdf Description: MOSFET N-CH 200V 7.6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 51W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
Produkt ist nicht verfügbar
FQU10N20LTU FQU10N20LTU Hersteller : onsemi / Fairchild fqd10n20l-1192195.pdf MOSFET 200V N-Ch QFET Logic Level
Produkt ist nicht verfügbar