Produkte > INFINEON TECHNOLOGIES > FS03MR12A6MA1LBBPSA1

FS03MR12A6MA1LBBPSA1 Infineon Technologies


Infineon-FS03MR12A6MA1LB-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e001788ce9d7125011 Hersteller: Infineon Technologies
FS03MR12A6MA1LBBPSA1
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details FS03MR12A6MA1LBBPSA1 Infineon Technologies

Description: SIC 6N-CH 1200V AG-HYBRIDD, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 6 N-Channel (3-Phase Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 400A, Input Capacitance (Ciss) (Max) @ Vds: 42500pF @ 600V, Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V, Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V, Vgs(th) (Max) @ Id: 5.55V @ 240mA, Supplier Device Package: AG-HYBRIDD-2, Part Status: Active.

Weitere Produktangebote FS03MR12A6MA1LBBPSA1

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
FS03MR12A6MA1LBBPSA1 FS03MR12A6MA1LBBPSA1 Hersteller : Infineon Technologies Infineon-FS03MR12A6MA1LB-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e001788ce9d7125011 Description: SIC 6N-CH 1200V AG-HYBRIDD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A
Input Capacitance (Ciss) (Max) @ Vds: 42500pF @ 600V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 240mA
Supplier Device Package: AG-HYBRIDD-2
Part Status: Active
Produkt ist nicht verfügbar
FS03MR12A6MA1LBBPSA1 Hersteller : Infineon Technologies Infineon_FS03MR12A6MA1LB_DataSheet_v01_10_EN-3162940.pdf Discrete Semiconductor Modules HYBRID PACK DRIVE SIC
Produkt ist nicht verfügbar