FZ30R07W1E3B31ABOMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 150 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
Description: IGBT MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 150 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details FZ30R07W1E3B31ABOMA1 Infineon Technologies
Description: IGBT MODULE, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single Switch, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 45 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 150 W, Current - Collector Cutoff (Max): 50 µA, Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V.
Weitere Produktangebote FZ30R07W1E3B31ABOMA1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
FZ30R07W1E3B31ABOMA1 | Hersteller : Infineon Technologies | IGBT Modules |
Produkt ist nicht verfügbar |