G050P03S

G050P03S Goford Semiconductor


GOFORD-G050P03S.pdf Hersteller: Goford Semiconductor
Description: P-30V,-25A,RD(MAX)<5.5M@-10V,VTH
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7221 pF @ 15 V
auf Bestellung 4000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.61 EUR
Mindestbestellmenge: 4000
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Technische Details G050P03S Goford Semiconductor

Description: P-30V,-25A,RD(MAX).

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G050P03S G050P03S Hersteller : Goford Semiconductor GOFORD-G050P03S.pdf Description: P-30V,-25A,RD(MAX)<5.5M@-10V,VTH
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7221 pF @ 15 V
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