G110N06T

G110N06T Goford Semiconductor


GOFORD-G110N06T.pdf Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 110A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 10000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+1.07 EUR
9000+ 1.02 EUR
Mindestbestellmenge: 3000
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Produktbewertung abgeben

Technische Details G110N06T Goford Semiconductor

Description: MOSFET N-CH 60V 110A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V, Power Dissipation (Max): 160W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V.

Weitere Produktangebote G110N06T nach Preis ab 1 EUR bis 2.64 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
G110N06T G110N06T Hersteller : Goford Semiconductor GOFORD-G110N06T.pdf Description: N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5538 pF @ 25 V
auf Bestellung 82 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.64 EUR
10+ 2.16 EUR
Mindestbestellmenge: 7
G110N06T Hersteller : GOFORD Semiconductor GOFORD-G110N06T.pdf N-CH,60V,110A,RD(max) Less Than 6.4mOhm at 10V,RD(max) Less Than 8.4mOhm at 4.5V,VTH 1.0V to 2.5V, TO-220er MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
155+1 EUR
Mindestbestellmenge: 155