G30N03D3 GOFORD Semiconductor
auf Bestellung 80000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 0.19 EUR |
| 15000+ | 0.17 EUR |
| 30000+ | 0.15 EUR |
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Technische Details G30N03D3 GOFORD Semiconductor
N-CH 30V 30A 7mOhm/MAX at 10V, 12mOhm/MAX at 5V DFN3x3.
Weitere Produktangebote G30N03D3 nach Preis ab 0.22 EUR bis 0.93 EUR
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| G30N03D3 | Hersteller : Goford Semiconductor |
 Description: N30V,RD(MAX)<7M@10V,RD(MAX)<12M@Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Power Dissipation (Max): 24W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 15 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| G30N03D3 | Hersteller : Goford Semiconductor |
Description: N30V,RD(MAX)<7M@10V,RD(MAX)<12M@ Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Power Dissipation (Max): 24W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 15 V |
auf Bestellung 14920 Stücke: Lieferzeit 10-14 Tag (e) |
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| G30N03D3 | Hersteller : Goford Semiconductor |
Description: N30V,RD(MAX)<7M@10V,RD(MAX)<12M@ Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Power Dissipation (Max): 24W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 15 V |
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