G3R350MT12J GeneSiC Semiconductor
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 6.09 EUR |
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Technische Details G3R350MT12J GeneSiC Semiconductor
Description: SIC MOSFET N-CH 11A TO263-7, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 15V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 2.69V @ 2mA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 800 V.
Weitere Produktangebote G3R350MT12J nach Preis ab 4.47 EUR bis 9.01 EUR
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G3R350MT12J | Hersteller : GeneSiC Semiconductor |
 Silicon Carbide MOSFET N Channel Enhancement Mode |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R350MT12J | Hersteller : GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 75W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 8A Pulsed drain current: 16A Power dissipation: 75W Case: TO263-7 Gate-source voltage: -5...15V On-state resistance: 0.35Ω Mounting: SMD Gate charge: 12nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
auf Bestellung 949 Stücke: Lieferzeit 7-14 Tag (e) |
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G3R350MT12J | Hersteller : GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 75W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 8A Pulsed drain current: 16A Power dissipation: 75W Case: TO263-7 Gate-source voltage: -5...15V On-state resistance: 0.35Ω Mounting: SMD Gate charge: 12nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
auf Bestellung 949 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R350MT12J | Hersteller : GeneSiC Semiconductor |
Silicon Carbide MOSFET N Channel Enhancement Mode |
auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R350MT12J | Hersteller : GeneSiC Semiconductor |
Silicon Carbide MOSFET N Channel Enhancement Mode |
auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R350MT12J | Hersteller : GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 11A TO263-7 Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 15V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.69V @ 2mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 800 V |
auf Bestellung 3623 Stücke: Lieferzeit 10-14 Tag (e) |
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G3R350MT12J | Hersteller : GeneSiC Semiconductor |
MOSFET 1200V 350mohm TO-263-7 G3R SiC MOSFET |
auf Bestellung 2254 Stücke: Lieferzeit 10-14 Tag (e) |
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G3R350MT12J | Hersteller : GENESIC SEMICONDUCTOR |
Description: GENESIC SEMICONDUCTOR - G3R350MT12J - Siliziumkarbid-MOSFET, Eins, n-Kanal, 11 A, 1.2 kV, 0.35 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 11A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.69V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 75W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: G3R productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 15V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.35ohm SVHC: Lead (19-Jan-2021) |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| G3R350MT12J | Hersteller : GeneSiC Semiconductor |
Silicon Carbide MOSFET N Channel Enhancement Mode |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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G3R350MT12J | Hersteller : GeneSiC Semiconductor |
Silicon Carbide MOSFET N Channel Enhancement Mode |
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