G3R450MT17J-TR GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: 1700V 450M TO-263-7 G3R SIC MOSF
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -5V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 1000 V
Description: 1700V 450M TO-263-7 G3R SIC MOSF
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -5V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 1000 V
auf Bestellung 510 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 13.25 EUR |
10+ | 11.95 EUR |
25+ | 11.47 EUR |
100+ | 10.78 EUR |
250+ | 10.35 EUR |
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Technische Details G3R450MT17J-TR GeneSiC Semiconductor
Description: 1700V 450M TO-263-7 G3R SIC MOSF, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V, Power Dissipation (Max): 71W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 2mA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -5V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 1000 V.
Weitere Produktangebote G3R450MT17J-TR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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G3R450MT17J-TR | Hersteller : GeneSiC Semiconductor |
Description: 1700V 450M TO-263-7 G3R SIC MOSF Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 2mA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -5V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 1000 V |
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