G75P04K

G75P04K Goford Semiconductor


products-detail.php?ProId=620 Hersteller: Goford Semiconductor
Description: P40V,RD(MAX)<10M@-10V,VTH-1.2V~-
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 20V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 20 V
auf Bestellung 2495 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.45 EUR
10+ 2.18 EUR
100+ 1.7 EUR
500+ 1.4 EUR
1000+ 1.11 EUR
Mindestbestellmenge: 8
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Technische Details G75P04K Goford Semiconductor

P-CH,-40V,-70A,RD(max) Less Than 10mOhm at -10V,VTH -1.2V to -2.5V, TO-252.

Weitere Produktangebote G75P04K nach Preis ab 0.57 EUR bis 0.57 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
G75P04K Hersteller : GOFORD Semiconductor products-detail.php?ProId=620 P-CH,-40V,-70A,RD(max) Less Than 10mOhm at -10V,VTH -1.2V to -2.5V, TO-252
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2500+0.57 EUR
Mindestbestellmenge: 2500
G75P04K G75P04K Hersteller : Goford Semiconductor products-detail.php?ProId=620 Description: P40V,RD(MAX)<10M@-10V,VTH-1.2V~-
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 20V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 20 V
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