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GANE3R9-150QBAZ

GANE3R9-150QBAZ Nexperia


Hersteller: Nexperia
MOSFET GANE3R9-150QBA/SOT8091/VQFN7
auf Bestellung 2500 Stücke:

Lieferzeit 199-203 Tag (e)
Anzahl Preis ohne MwSt
1+12.58 EUR
10+ 10.79 EUR
25+ 9.77 EUR
100+ 8.99 EUR
250+ 8.47 EUR
500+ 7.92 EUR
1000+ 7.13 EUR
Produktrezensionen
Produktbewertung abgeben

Technische Details GANE3R9-150QBAZ Nexperia

Description: GANE3R9-150QBA/SOT8091/VQFN7, Packaging: Tape & Reel (TR), Package / Case: 25-PowerVFQFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 5V, Power Dissipation (Max): 65W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 12mA, Supplier Device Package: 25-VQFN (4x6), Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V.

Weitere Produktangebote GANE3R9-150QBAZ nach Preis ab 6.92 EUR bis 12.67 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
GANE3R9-150QBAZ Hersteller : Nexperia USA Inc. Description: GANE3R9-150QBA/SOT8091/VQFN7
Packaging: Tape & Reel (TR)
Package / Case: 25-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 5V
Power Dissipation (Max): 65W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 12mA
Supplier Device Package: 25-VQFN (4x6)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+6.92 EUR
Mindestbestellmenge: 2500
GANE3R9-150QBAZ Hersteller : Nexperia USA Inc. Description: GANE3R9-150QBA/SOT8091/VQFN7
Packaging: Cut Tape (CT)
Package / Case: 25-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 5V
Power Dissipation (Max): 65W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 12mA
Supplier Device Package: 25-VQFN (4x6)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+12.67 EUR
10+ 11.45 EUR
25+ 10.92 EUR
100+ 9.48 EUR
250+ 9.05 EUR
500+ 8.26 EUR
1000+ 7.19 EUR
Mindestbestellmenge: 2