GD450HFY120C6S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A, Pulsed collector current: 900A, Collector current: 450A, Gate-emitter voltage: ±20V, Electrical mounting: Press-in PCB; screw, Mechanical mounting: screw, Semiconductor structure: transistor/transistor, Max. off-state voltage: 1.2kV, Type of module: IGBT, Case: C6 62mm, Technology: Advanced Trench FS IGBT, Topology: IGBT half-bridge, Anzahl je Verpackung: 10 Stücke.