GD450HTY120C7S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 450A, Pulsed collector current: 900A, Electrical mounting: Press-in PCB; screw, Mechanical mounting: screw, Type of module: IGBT, Technology: Advanced Trench FS IGBT, Topology: IGBT half-bridge x3; NTC thermistor, Case: C7, Anzahl je Verpackung: 8 Stücke.