GD50HFU120C1S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A, Case: C1 34mm, Topology: IGBT half-bridge, Gate-emitter voltage: ±20V, Pulsed collector current: 100A, Semiconductor structure: transistor/transistor, Max. off-state voltage: 1.2kV, Collector current: 50A, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Type of module: IGBT, Technology: NPT Ultra Fast IGBT, Anzahl je Verpackung: 24 Stücke.