GD50PJX65L3S STARPOWER
Hersteller: STARPOWERDescription: STARPOWER - GD50PJX65L3S - IGBT-Modul, PIM-Dreiphasen-Eingangsgleichrichter, 91 A, 1.45 V, 264 W, 150 °C, Module
tariffCode: 85412900
productTraceability: No
Kollektor-Emitter-Spannung, max.: 650V
rohsCompliant: YES
Verlustleistung: 264W
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.45V
Betriebstemperatur, max.: 150°C
usEccn: EAR99
Dauer-Kollektorstrom: 91A
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details GD50PJX65L3S STARPOWER
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A, Case: L3.0, Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge, Gate-emitter voltage: ±20V, Pulsed collector current: 100A, Semiconductor structure: diode/transistor, Max. off-state voltage: 650V, Collector current: 50A, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: IGBT, Technology: Trench FS IGBT, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote GD50PJX65L3S
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| GD50PJX65L3S | Hersteller : STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A Case: L3.0 Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Gate-emitter voltage: ±20V Pulsed collector current: 100A Semiconductor structure: diode/transistor Max. off-state voltage: 650V Collector current: 50A Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Trench FS IGBT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| GD50PJX65L3S | Hersteller : STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A Case: L3.0 Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Gate-emitter voltage: ±20V Pulsed collector current: 100A Semiconductor structure: diode/transistor Max. off-state voltage: 650V Collector current: 50A Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Trench FS IGBT |
Produkt ist nicht verfügbar |