GD600SGX170C2S STARPOWER SEMICONDUCTOR


Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Case: C2 62mm
Electrical mounting: screw
Topology: single transistor
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 12 Stücke
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details GD600SGX170C2S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V, Type of module: IGBT, Semiconductor structure: single transistor, Max. off-state voltage: 1.7kV, Case: C2 62mm, Electrical mounting: screw, Topology: single transistor, Mechanical mounting: screw, Collector current: 600A, Pulsed collector current: 1.2kA, Technology: Trench FS IGBT, Gate-emitter voltage: ±20V, Anzahl je Verpackung: 12 Stücke.

Weitere Produktangebote GD600SGX170C2S

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
GD600SGX170C2S Hersteller : STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Case: C2 62mm
Electrical mounting: screw
Topology: single transistor
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar