GD75FFY120C6S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Pulsed collector current: 150A, Collector current: 75A, Gate-emitter voltage: ±20V, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Semiconductor structure: transistor/transistor, Max. off-state voltage: 1.2kV, Type of module: IGBT, Case: C6 62mm, Technology: Advanced Trench FS IGBT, Topology: IGBT three-phase bridge; NTC thermistor, Anzahl je Verpackung: 10 Stücke.