GF1KHE3_A/H Vishay General Semiconductor
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 1.2 EUR |
| 10+ | 1.03 EUR |
| 100+ | 0.71 EUR |
| 500+ | 0.6 EUR |
| 1000+ | 0.52 EUR |
| 9000+ | 0.47 EUR |
| 24000+ | 0.44 EUR |
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Technische Details GF1KHE3_A/H Vishay General Semiconductor
Description: DIODE GEN PURP 800V 1A DO214BA, Packaging: Tape & Reel (TR), Package / Case: DO-214BA, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2 µs, Technology: Standard, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-214BA (GF1), Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 800 V.
Weitere Produktangebote GF1KHE3_A/H nach Preis ab 0.5 EUR bis 1.17 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| GF1KHE3_A/H | Hersteller : Vishay |
 Diode Switching 800V 1A Automotive AEC-Q101 2-Pin DO-214BA T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GF1KHE3_A/H | Hersteller : Vishay |
Diode Switching 800V 1A Automotive AEC-Q101 2-Pin DO-214BA T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
|
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| GF1KHE3_A/H | Hersteller : Vishay |
Diode Switching 800V 1A Automotive 2-Pin DO-214BA T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GF1KHE3_A/H | Hersteller : Vishay |
Diode Switching 800V 1A Automotive AEC-Q101 2-Pin DO-214BA T/R |
Produkt ist nicht verfügbar |
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| GF1KHE3_A/H | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
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| GF1KHE3_A/H | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 1A DO214BA Packaging: Cut Tape (CT) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |