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GHXS020A060S-D3

GHXS020A060S-D3 SemiQ


GHXS020A060S_D3-1915589.pdf Hersteller: SemiQ
Discrete Semiconductor Modules SiC SBD Parallel Power Module 600V 20A
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20+ 39.79 EUR
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100+ 35.83 EUR
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Technische Details GHXS020A060S-D3 SemiQ

Description: DIODE MOD SIC SCHOT 600V SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 20A, Supplier Device Package: SOT-227, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A, Current - Reverse Leakage @ Vr: 200 µA @ 600 V.

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GHXS020A060S-D3 GHXS020A060S-D3 Hersteller : SemiQ GHXS020A060S-D3.pdf Description: DIODE MOD SIC SCHOT 600V SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
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