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GPT65Z4YMR MGT BRIGHTEK


GPT65Z4YMR.PDF Hersteller: MGT BRIGHTEK
Category: SMD N channel transistors
Description: Transistor: N-JFET/N-MOSFET; GaN; unipolar; HEMT,cascode; 650V
Type of transistor: N-JFET/N-MOSFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: cascode; HEMT
Drain-source voltage: 650V
Drain current: 11.5A
Pulsed drain current: 80A
Power dissipation: 67.5W
Case: DFN8080
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tape
Anzahl je Verpackung: 2500 Stücke
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Technische Details GPT65Z4YMR MGT BRIGHTEK

Category: SMD N channel transistors, Description: Transistor: N-JFET/N-MOSFET; GaN; unipolar; HEMT,cascode; 650V, Type of transistor: N-JFET/N-MOSFET, Technology: GaN, Polarisation: unipolar, Kind of transistor: cascode; HEMT, Drain-source voltage: 650V, Drain current: 11.5A, Pulsed drain current: 80A, Power dissipation: 67.5W, Case: DFN8080, Gate-source voltage: ±20V, On-state resistance: 0.13Ω, Mounting: SMD, Gate charge: 38nC, Kind of package: tape, Anzahl je Verpackung: 2500 Stücke.

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GPT65Z4YMR Hersteller : MGT BRIGHTEK GPT65Z4YMR.PDF Category: SMD N channel transistors
Description: Transistor: N-JFET/N-MOSFET; GaN; unipolar; HEMT,cascode; 650V
Type of transistor: N-JFET/N-MOSFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: cascode; HEMT
Drain-source voltage: 650V
Drain current: 11.5A
Pulsed drain current: 80A
Power dissipation: 67.5W
Case: DFN8080
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tape
Produkt ist nicht verfügbar