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GS-065-008-1-L-MR

GS-065-008-1-L-MR GaN Systems

Hersteller: GaN Systems
MOSFET 650V, 8A, GaN E-mode, 5x6 PDFN, Bottom-side cooled
auf Bestellung 1008 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+8.06 EUR
10+ 6.76 EUR
25+ 6.37 EUR
100+ 5.47 EUR
250+ 5.17 EUR
500+ 4.86 EUR
1000+ 4.15 EUR
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Technische Details GS-065-008-1-L-MR GaN Systems

Description: GS-065-008-1-L-MR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 225mOhm @ 2.2A, 6V, Vgs(th) (Max) @ Id: 1.4V @ 1.74mA, Supplier Device Package: 8-PDFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 400 V.

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GS-065-008-1-L-MR Hersteller : GaN Systems gs-065-008-1-l-ds-rev-210104.pdf Trans MOSFET N-CH GaN 650V 8A 8-Pin PDFN EP Reel
Produkt ist nicht verfügbar
GS-065-008-1-L-MR GS-065-008-1-L-MR Hersteller : Infineon Technologies Canada Inc. Description: GS-065-008-1-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 2.2A, 6V
Vgs(th) (Max) @ Id: 1.4V @ 1.74mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 400 V
Produkt ist nicht verfügbar
GS-065-008-1-L-MR GS-065-008-1-L-MR Hersteller : Infineon Technologies Canada Inc. Description: GS-065-008-1-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 2.2A, 6V
Vgs(th) (Max) @ Id: 1.4V @ 1.74mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 400 V
Produkt ist nicht verfügbar