GS-065-060-5-B-A-MR GaN Systems
auf Bestellung 188 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 75.22 EUR |
| 10+ | 67.04 EUR |
| 25+ | 63.04 EUR |
| 50+ | 61.78 EUR |
| 250+ | 52.73 EUR |
| 1000+ | 52.01 EUR |
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Technische Details GS-065-060-5-B-A-MR GaN Systems
Description: GS-065-060-5-B-A-MR, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V, Vgs(th) (Max) @ Id: 2.6V @ 16.4mA, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V, Qualification: AEC-Q101.
Weitere Produktangebote GS-065-060-5-B-A-MR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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GS-065-060-5-B-A-MR | Hersteller : GaN Systems |
 Trans MOSFET N-CH GaN 650V 60A Automotive 6-Pin GaNPX T/R |
Produkt ist nicht verfügbar |
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GS-065-060-5-B-A-MR | Hersteller : Infineon Technologies Canada Inc. |
Description: GS-065-060-5-B-A-MR Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V Vgs(th) (Max) @ Id: 2.6V @ 16.4mA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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GS-065-060-5-B-A-MR | Hersteller : Infineon Technologies Canada Inc. |
Description: GS-065-060-5-B-A-MR Packaging: Cut Tape (CT) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V Vgs(th) (Max) @ Id: 2.6V @ 16.4mA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |