GS66504B-MR GaN Systems
auf Bestellung 7459 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 22.53 EUR |
| 10+ | 19.85 EUR |
| 25+ | 19.31 EUR |
| 50+ | 18.23 EUR |
| 100+ | 17.97 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details GS66504B-MR GaN Systems
Description: GS66504B-MR, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 4.5A, 6V, Vgs(th) (Max) @ Id: 1.3V @ 3.5mA, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V.
Weitere Produktangebote GS66504B-MR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
GS66504B-MR | Hersteller : GaN Systems |
 Bottom Side Cooled 650 V E-mode GaN Transistor |
Produkt ist nicht verfügbar |
|
 |
GS66504B-MR | Hersteller : Infineon Technologies Canada Inc. |
Description: GS66504B-MR Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 4.5A, 6V Vgs(th) (Max) @ Id: 1.3V @ 3.5mA Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V |
Produkt ist nicht verfügbar |
|
|
|
GS66504B-MR | Hersteller : Infineon Technologies Canada Inc. |
Description: GS66504B-MR Packaging: Cut Tape (CT) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 4.5A, 6V Vgs(th) (Max) @ Id: 1.3V @ 3.5mA Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V |
Produkt ist nicht verfügbar |