GSFN2306 Good-Ark Semiconductor
Hersteller: Good-Ark SemiconductorDescription: MOSFET, N-CH, SINGLE, 65A, 20V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 4.5V
Power Dissipation (Max): 44.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-PPAK (3.05x3.08)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.28 EUR |
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Technische Details GSFN2306 Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 65A, 20V,, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 4.5V, Power Dissipation (Max): 44.6W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-PPAK (3.05x3.08), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V.
Weitere Produktangebote GSFN2306 nach Preis ab 0.31 EUR bis 0.79 EUR
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GSFN2306 | Hersteller : Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 65A, 20V, Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 4.5V Power Dissipation (Max): 44.6W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-PPAK (3.05x3.08) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V |
auf Bestellung 2895 Stücke: Lieferzeit 10-14 Tag (e) |
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