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HAT2202C-EL-E

HAT2202C-EL-E Renesas


Hersteller: Renesas
Description: HAT2202C-EL-E - SILICON N CHANNE
Packaging: Bulk
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 200mW
Vgs(th) (Max) @ Id: 1.4V @ 1mA
Supplier Device Package: 6-CMFPAK
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
auf Bestellung 46797 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
960+0.5 EUR
Mindestbestellmenge: 960
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Technische Details HAT2202C-EL-E Renesas

Description: HAT2202C-EL-E - SILICON N CHANNE, Packaging: Bulk, Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 200mW, Vgs(th) (Max) @ Id: 1.4V @ 1mA, Supplier Device Package: 6-CMFPAK, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V.

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